SBC857CLT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.A collector emitter saturation voltage of -650mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.In the part, the transition frequency is 100MHz.Collector current can be as low as 100mA volts at its maximum.

SBC857CLT1G Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

SBC857CLT1G Applications

There are a lot of ON Semiconductor SBC857CLT1G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter