MPSA06RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSA06RLRPG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.08000
$0.08
500
$0.0792
$39.6
1000
$0.0784
$78.4
1500
$0.0776
$116.4
2000
$0.0768
$153.6
2500
$0.076
$190
MPSA06RLRPG Product Details
MPSA06RLRPG Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.A transition frequency of 100MHz is present in the part.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
MPSA06RLRPG Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA a transition frequency of 100MHz
MPSA06RLRPG Applications
There are a lot of Rochester Electronics, LLC MPSA06RLRPG applications of single BJT transistors.