APT27HZTR-G1 Overview

In this device, the DC current gain is 6 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 40mA, 200mA means Ic has reached its maximum value(saturated).Maintaining the continuous collector voltage at 800mA is essential for high efficiency.Emitter base voltages of 9V can achieve high levels of efficiency.An input voltage of 450V volts is the breakdown voltage.Supplier device package TO-92 comes with the product.This device displays a 450V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 800mA volts.

APT27HZTR-G1 Features

the DC current gain for this device is 6 @ 300mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92

APT27HZTR-G1 Applications

There are a lot of Diodes Incorporated APT27HZTR-G1 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver