PBSS5240Y,135 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

PBSS5240Y,135 Features

the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS5240Y,135 Applications

There are a lot of Nexperia USA Inc. PBSS5240Y,135 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting