SSTA28T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
SSTA28T116 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
STA28
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Max Breakdown Voltage
80V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
12V
hFE Min
10000
VCEsat-Max
1.5 V
Collector-Base Capacitance-Max
8pF
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.156675
$0.156675
10
$0.147806
$1.47806
100
$0.139440
$13.944
500
$0.131547
$65.7735
1000
$0.124101
$124.101
SSTA28T116 Product Details
SSTA28T116 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).Parts of this part have transition frequencies of 200MHz.This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
SSTA28T116 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 12V the current rating of this device is 300mA a transition frequency of 200MHz
SSTA28T116 Applications
There are a lot of ROHM Semiconductor SSTA28T116 applications of single BJT transistors.