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NJVMJB42CT4G

NJVMJB42CT4G

NJVMJB42CT4G

ON Semiconductor

NJVMJB42CT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJB42CT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form GULL WING
Base Part Number MJB42
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $0.86424 $691.392
1,600 $0.68229 $0.68229
2,400 $0.63680 $1.2736
5,600 $0.60648 $3.0324
NJVMJB42CT4G Product Details

NJVMJB42CT4G Overview


This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 600mA, 6A.In this part, there is a transition frequency of 3MHz.A maximum collector current of 6A volts is possible.

NJVMJB42CT4G Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz

NJVMJB42CT4G Applications


There are a lot of ON Semiconductor NJVMJB42CT4G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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