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NSVMMBT5087LT1G

  • NSVMMBT5087LT1G
  • NSVMMBT5087LT1G

NSVMMBT5087LT1G

NSVMMBT5087LT1G

ON Semiconductor

NSVMMBT5087LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT5087LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 40MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.104290 $0.10429
10 $0.098387 $0.98387
100 $0.092818 $9.2818
500 $0.087564 $43.782
1000 $0.082608 $82.608
NSVMMBT5087LT1G Product Details

NSVMMBT5087LT1G Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Maximum collector currents can be below 50mA volts.

NSVMMBT5087LT1G Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA

NSVMMBT5087LT1G Applications


There are a lot of ON Semiconductor NSVMMBT5087LT1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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