NSVMMBT5087LT1G Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Maximum collector currents can be below 50mA volts.
NSVMMBT5087LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
NSVMMBT5087LT1G Applications
There are a lot of ON Semiconductor NSVMMBT5087LT1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
