BCX52TA Overview

DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 150MHz.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 1A volts is possible.

BCX52TA Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCX52TA Applications

There are a lot of Diodes Incorporated BCX52TA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter