2SA1709S-AN Overview

In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -220mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.When collector current reaches its maximum, it can reach 2A volts.

2SA1709S-AN Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -6V

2SA1709S-AN Applications

There are a lot of ON Semiconductor 2SA1709S-AN applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver