2SA1768T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1768T-AN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Max Power Dissipation
1W
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage
160V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
-6V
hFE Min
140
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.391900
$0.3919
10
$0.369717
$3.69717
100
$0.348789
$34.8789
500
$0.329047
$164.5235
1000
$0.310421
$310.421
2SA1768T-AN Product Details
2SA1768T-AN Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 25mA, 250mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
2SA1768T-AN Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 500mV @ 25mA, 250mA the emitter base voltage is kept at -6V
2SA1768T-AN Applications
There are a lot of ON Semiconductor 2SA1768T-AN applications of single BJT transistors.