2SA1943OTU Overview

This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.There is a transition frequency of 30MHz in the part.In extreme cases, the collector current can be as low as 17A volts.

2SA1943OTU Features

the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz

2SA1943OTU Applications

There are a lot of ON Semiconductor 2SA1943OTU applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter