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2SA2124-TD-E

  • 2SA2124-TD-E
  • 2SA2124-TD-E

2SA2124-TD-E

2SA2124-TD-E

ON Semiconductor

2SA2124-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA2124-TD-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 1.3W
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Max Frequency 440MHz
Transition Frequency 440MHz
Collector Emitter Saturation Voltage -400mV
Frequency - Transition 440MHz
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.13041 $0.13041
2,000 $0.11955 $0.2391
5,000 $0.11230 $0.5615
10,000 $0.10505 $1.0505
25,000 $0.09660 $2.415
2SA2124-TD-E Product Details

2SA2124-TD-E Overview


This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 440MHz.Maximum collector currents can be below 2A volts.

2SA2124-TD-E Features


the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
a transition frequency of 440MHz

2SA2124-TD-E Applications


There are a lot of ON Semiconductor 2SA2124-TD-E applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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