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2N3501 PBFREE

2N3501 PBFREE

2N3501 PBFREE

Central Semiconductor Corp

2N3501 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3501 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 34 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 300mA
Frequency - Transition 150MHz
RoHS StatusROHS3 Compliant
In-Stock:1006 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.655808$6.655808
10$6.279065$62.79065
100$5.923645$592.3645
500$5.588345$2794.1725
1000$5.272023$5272.023

2N3501 PBFREE Product Details

2N3501 PBFREE Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Device displays Collector Emitter Breakdown (150V maximal voltage).

2N3501 PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA

2N3501 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3501 PBFREE applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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