Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N3501 PBFREE

2N3501 PBFREE

2N3501 PBFREE

Central Semiconductor Corp

2N3501 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3501 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 34 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 300mA
Frequency - Transition 150MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.655808 $6.655808
10 $6.279065 $62.79065
100 $5.923645 $592.3645
500 $5.588345 $2794.1725
1000 $5.272023 $5272.023
2N3501 PBFREE Product Details

2N3501 PBFREE Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Device displays Collector Emitter Breakdown (150V maximal voltage).

2N3501 PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA

2N3501 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3501 PBFREE applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News