2N3501 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3501 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
34 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
300mA
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.655808
$6.655808
10
$6.279065
$62.79065
100
$5.923645
$592.3645
500
$5.588345
$2794.1725
1000
$5.272023
$5272.023
2N3501 PBFREE Product Details
2N3501 PBFREE Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Device displays Collector Emitter Breakdown (150V maximal voltage).
2N3501 PBFREE Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 400mV @ 15mA, 150mA
2N3501 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3501 PBFREE applications of single BJT transistors.