BC33825TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.A maximum collector current of 800mA volts is possible.

BC33825TA Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz

BC33825TA Applications

There are a lot of ON Semiconductor BC33825TA applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface