BC817-25LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

BC817-25LT1G Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz

BC817-25LT1G Applications

There are a lot of ON Semiconductor BC817-25LT1G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting