BCW65ALT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.A collector emitter saturation voltage of 700mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 32V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

BCW65ALT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz

BCW65ALT1G Applications

There are a lot of ON Semiconductor BCW65ALT1G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter