BCW72LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.With a collector emitter saturation voltage of 210mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A breakdown input voltage of 45V volts can be used.In extreme cases, the collector current can be as low as 100mA volts.
BCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BCW72LT1G Applications
There are a lot of ON Semiconductor BCW72LT1G applications of single BJT transistors.
- Driver
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- Inverter
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- Interface
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- Muting
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