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2SD2671TL

2SD2671TL

2SD2671TL

ROHM Semiconductor

2SD2671TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SD2671TL Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2671
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product280MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage30V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage180mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 2A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11088 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.528160$4.52816
10$4.271849$42.71849
100$4.030046$403.0046
500$3.801930$1900.965
1000$3.586727$3586.727

2SD2671TL Product Details

2SD2671TL Overview


In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 180mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 75mA, 1.5A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 280MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SD2671TL Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 280MHz

2SD2671TL Applications


There are a lot of ROHM Semiconductor 2SD2671TL applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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