MSA1162YT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 6V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 80MHz.A maximum collector current of 100mA volts can be achieved.
MSA1162YT1G Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 80MHz
MSA1162YT1G Applications
There are a lot of ON Semiconductor MSA1162YT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
