BCX70H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCX70H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
59.987591mg
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
200mA
Frequency
125MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCX70
Qualification Status
Not Qualified
Number of Elements
1
Voltage
45V
Element Configuration
Single
Current
1A
Power Dissipation
350mW
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
550mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Turn Off Time-Max (toff)
800ns
Height
930μm
Length
2.92mm
Width
1.3mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04395
$0.13185
6,000
$0.03822
$0.22932
BCX70H Product Details
BCX70H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 550mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 200mA volts.
BCX70H Features
the DC current gain for this device is 180 @ 2mA 5V a collector emitter saturation voltage of 550mV the vce saturation(Max) is 550mV @ 1.25mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 200mA a transition frequency of 125MHz
BCX70H Applications
There are a lot of ON Semiconductor BCX70H applications of single BJT transistors.