Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD138G

BD138G

BD138G

ON Semiconductor

BD138G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD138G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Supplier Device Package TO-225AA
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 1.25W
Current Rating -1.5A
Base Part Number BD138
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1.25W
Power - Max 1.25W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.61000 $0.61
10 $0.52100 $5.21
100 $0.38900 $38.9
500 $0.30562 $152.81
1,000 $0.23616 $0.23616
BD138G Product Details

BD138G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 60V volts.This product comes in a TO-225AA device package from the supplier.There is a 60V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 1.5A volts.

BD138G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
the supplier device package of TO-225AA

BD138G Applications


There are a lot of ON Semiconductor BD138G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

Related Part Number

2SA1179N6-TB-E
PBSS5240V,115
2SB1215S-H
2SB1215S-H
$0 $/piece
MJ802
MJ802
$0 $/piece
PBSS8110Y,115
FMMT497TA
BC807-16HVL
2SD2657KT146
2SC4445
2SC4445
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News