BD435G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD435G Features

the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz

BD435G Applications

There are a lot of ON Semiconductor BD435G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver