BDV64BG Overview

DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 20mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-10A).Parts of this part have transition frequencies of 0.1MHz.In extreme cases, the collector current can be as low as 10A volts.

BDV64BG Features

the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz

BDV64BG Applications

There are a lot of ON Semiconductor BDV64BG applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter