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MJF6388G

MJF6388G

MJF6388G

ON Semiconductor

MJF6388G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJF6388G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 3A 4V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 20MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 3000
Continuous Collector Current 10A
Height 9.24mm
Length 10.63mm
Width 4.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.60000 $1.6
50 $1.35880 $67.94
100 $1.15760 $115.76
500 $0.95110 $475.55
1,000 $0.78805 $0.78805
MJF6388G Product Details

MJF6388G Overview


This device has a DC current gain of 3000 @ 3A 4V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.When VCE saturation is 3V @ 100mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 10A is essential for high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.A transition frequency of 20MHz is present in the part.In extreme cases, the collector current can be as low as 10A volts.

MJF6388G Features


the DC current gain for this device is 3000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 10V
the current rating of this device is 10A
a transition frequency of 20MHz

MJF6388G Applications


There are a lot of ON Semiconductor MJF6388G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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