MJF6388G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJF6388G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
3000 @ 3A 4V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
20MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
3000
Continuous Collector Current
10A
Height
9.24mm
Length
10.63mm
Width
4.9mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.60000
$1.6
50
$1.35880
$67.94
100
$1.15760
$115.76
500
$0.95110
$475.55
1,000
$0.78805
$0.78805
MJF6388G Product Details
MJF6388G Overview
This device has a DC current gain of 3000 @ 3A 4V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.When VCE saturation is 3V @ 100mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 10A is essential for high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.A transition frequency of 20MHz is present in the part.In extreme cases, the collector current can be as low as 10A volts.
MJF6388G Features
the DC current gain for this device is 3000 @ 3A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 100mA, 10A the emitter base voltage is kept at 10V the current rating of this device is 10A a transition frequency of 20MHz
MJF6388G Applications
There are a lot of ON Semiconductor MJF6388G applications of single BJT transistors.