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DXTN07045DFG-7

DXTN07045DFG-7

DXTN07045DFG-7

Diodes Incorporated

DXTN07045DFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTN07045DFG-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100mA 2V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 1A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 150MHz
RoHS StatusROHS3 Compliant
In-Stock:13562 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.536000$0.536
10$0.505660$5.0566
100$0.477038$47.7038
500$0.450036$225.018
1000$0.424562$424.562

DXTN07045DFG-7 Product Details

DXTN07045DFG-7 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 1A.The device exhibits a collector-emitter breakdown at 45V.

DXTN07045DFG-7 Features


the DC current gain for this device is 500 @ 100mA 2V
the vce saturation(Max) is 300mV @ 5mA, 1A

DXTN07045DFG-7 Applications


There are a lot of Diodes Incorporated DXTN07045DFG-7 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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