DXTN07045DFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTN07045DFG-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
900mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 100mA 2V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 1A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.536000
$0.536
10
$0.505660
$5.0566
100
$0.477038
$47.7038
500
$0.450036
$225.018
1000
$0.424562
$424.562
DXTN07045DFG-7 Product Details
DXTN07045DFG-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 1A.The device exhibits a collector-emitter breakdown at 45V.
DXTN07045DFG-7 Features
the DC current gain for this device is 500 @ 100mA 2V the vce saturation(Max) is 300mV @ 5mA, 1A
DXTN07045DFG-7 Applications
There are a lot of Diodes Incorporated DXTN07045DFG-7 applications of single BJT transistors.