MPS651RLRA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As you can see, the part has a transition frequency of 75MHz.The breakdown input voltage is 60V volts.When collector current reaches its maximum, it can reach 2A volts.
MPS651RLRA Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
MPS651RLRA Applications
There are a lot of ON Semiconductor MPS651RLRA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
