UML6NTR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
UML6NTR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
Subcategory
Other Transistors
Max Power Dissipation
120mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
*ML6
Pin Count
5
Max Output Current
500mA
Number of Elements
1
Polarity
NPN
Number of Channels
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
320MHz
Transistor Type
NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
320MHz
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067021
$0.067021
500
$0.049280
$24.64
1000
$0.041067
$41.067
2000
$0.037676
$75.352
5000
$0.035211
$176.055
10000
$0.032754
$327.54
15000
$0.031677
$475.155
50000
$0.031148
$1557.4
UML6NTR Product Details
UML6NTR Overview
In this device, the DC current gain is 270 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 320MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
UML6NTR Features
the DC current gain for this device is 270 @ 10mA 2V the vce saturation(Max) is 250mV @ 10mA, 200mA the emitter base voltage is kept at 6V a transition frequency of 320MHz
UML6NTR Applications
There are a lot of ROHM Semiconductor UML6NTR applications of single BJT transistors.