2SC5712(TE12L,F) Overview

DC current gain in this device equals 400 @ 300mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 140mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 140mV @ 20mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A maximum collector current of 3A volts can be achieved.

2SC5712(TE12L,F) Features

the DC current gain for this device is 400 @ 300mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 140mV @ 20mA, 1A
the emitter base voltage is kept at 7V

2SC5712(TE12L,F) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC5712(TE12L,F) applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter