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DSS9110Y-7

DSS9110Y-7

DSS9110Y-7

Diodes Incorporated

DSS9110Y-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS9110Y-7 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 625mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Element Configuration Dual
Power - Max 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 320mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -120mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.400440 $0.40044
10 $0.377774 $3.77774
100 $0.356390 $35.639
500 $0.336217 $168.1085
1000 $0.317186 $317.186
DSS9110Y-7 Product Details

DSS9110Y-7 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.When VCE saturation is 320mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of -1A is necessary for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 100V volts.A maximum collector current of 1A volts can be achieved.

DSS9110Y-7 Features


the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

DSS9110Y-7 Applications


There are a lot of Diodes Incorporated DSS9110Y-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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