DSS9110Y-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS9110Y-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
625mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Element Configuration
Dual
Power - Max
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
320mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-120mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
-120V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-1A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.400440
$0.40044
10
$0.377774
$3.77774
100
$0.356390
$35.639
500
$0.336217
$168.1085
1000
$0.317186
$317.186
DSS9110Y-7 Product Details
DSS9110Y-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.When VCE saturation is 320mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of -1A is necessary for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 100V volts.A maximum collector current of 1A volts can be achieved.
DSS9110Y-7 Features
the DC current gain for this device is 150 @ 500mA 5V a collector emitter saturation voltage of -120mV the vce saturation(Max) is 320mV @ 100mA, 1A the emitter base voltage is kept at -5V a transition frequency of 100MHz
DSS9110Y-7 Applications
There are a lot of Diodes Incorporated DSS9110Y-7 applications of single BJT transistors.