PBSS4520X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4520X,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.5W
Terminal Form
FLAT
Frequency
125MHz
Base Part Number
PBSS4520
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Case Connection
COLLECTOR
Power - Max
550mW
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
220mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
125MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.579710
$16.57971
10
$15.641237
$156.41237
100
$14.755883
$1475.5883
500
$13.920645
$6960.3225
1000
$13.132684
$13132.684
PBSS4520X,135 Product Details
PBSS4520X,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2A 2V.A VCE saturation (Max) of 220mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A transition frequency of 125MHz is present in the part.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.
PBSS4520X,135 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 220mV @ 500mA, 5A the emitter base voltage is kept at 5V a transition frequency of 125MHz
PBSS4520X,135 Applications
There are a lot of Nexperia USA Inc. PBSS4520X,135 applications of single BJT transistors.