KSA812YMTF Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 135 @ 1mA 6V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).180MHz is present in the transition frequency.Input voltage breakdown is available at 50V volts.During maximum operation, collector current can be as low as 100mA volts.

KSA812YMTF Features

the DC current gain for this device is 135 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 180MHz

KSA812YMTF Applications

There are a lot of ON Semiconductor KSA812YMTF applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver