KSH31CTF Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).As you can see, the part has a transition frequency of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.When collector current reaches its maximum, it can reach 3A volts.
KSH31CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
KSH31CTF Applications
There are a lot of ON Semiconductor KSH31CTF applications of single BJT transistors.
- Muting
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- Interface
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- Inverter
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- Driver
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