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2N3904TFR

2N3904TFR

2N3904TFR

ON Semiconductor

2N3904TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3904TFR Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 200mA
Frequency 300MHz
Base Part Number 2N3904
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Height 8.77mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.04804 $0.09608
6,000 $0.04201 $0.25206
10,000 $0.03598 $0.3598
50,000 $0.03196 $1.598
100,000 $0.02995 $2.995
2N3904TFR Product Details

2N3904TFR Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 300MHz is present in the part.As a result, it can handle voltages as low as 40V volts.During maximum operation, collector current can be as low as 200mA volts.

2N3904TFR Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

2N3904TFR Applications


There are a lot of ON Semiconductor 2N3904TFR applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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