KSC945CGBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1mA 6V.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.In this part, there is a transition frequency of 300MHz.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor KSC945CGBU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
