Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N4401NLBU

2N4401NLBU

2N4401NLBU

ON Semiconductor

2N4401NLBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N4401NLBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 178.2mg
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Current Rating 600mA
Base Part Number 2N4401
Element Configuration Single
Gain Bandwidth Product 250MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.424045 $0.424045
10 $0.400042 $4.00042
100 $0.377399 $37.7399
500 $0.356036 $178.018
1000 $0.335883 $335.883
2N4401NLBU Product Details

2N4401NLBU Overview


This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

2N4401NLBU Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

2N4401NLBU Applications


There are a lot of ON Semiconductor 2N4401NLBU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News