2SD1484KT146R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 500mA volts can be achieved.
2SD1484KT146R Features
the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 250MHz
2SD1484KT146R Applications
There are a lot of ROHM Semiconductor 2SD1484KT146R applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
