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2SD1484KT146R

2SD1484KT146R

2SD1484KT146R

ROHM Semiconductor

2SD1484KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1484KT146R Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1484
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 10mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 500mA
Height 1.1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.328000 $6.328
10 $5.969811 $59.69811
100 $5.631897 $563.1897
500 $5.313111 $2656.5555
1000 $5.012369 $5012.369
2SD1484KT146R Product Details

2SD1484KT146R Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 500mA volts can be achieved.

2SD1484KT146R Features


the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 250MHz

2SD1484KT146R Applications


There are a lot of ROHM Semiconductor 2SD1484KT146R applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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