2SD1484KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD1484KT146R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD1484
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 10mA 3V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Continuous Collector Current
500mA
Height
1.1mm
Length
2.9mm
Width
1.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.328000
$6.328
10
$5.969811
$59.69811
100
$5.631897
$563.1897
500
$5.313111
$2656.5555
1000
$5.012369
$5012.369
2SD1484KT146R Product Details
2SD1484KT146R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 500mA volts can be achieved.
2SD1484KT146R Features
the DC current gain for this device is 180 @ 10mA 3V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 15mA, 150mA the emitter base voltage is kept at 5V the current rating of this device is 300mA a transition frequency of 250MHz
2SD1484KT146R Applications
There are a lot of ROHM Semiconductor 2SD1484KT146R applications of single BJT transistors.