SMMBT3904LT3G Overview

This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A 200mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 300MHz.In extreme cases, the collector current can be as low as 200mA volts.

SMMBT3904LT3G Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

SMMBT3904LT3G Applications

There are a lot of ON Semiconductor SMMBT3904LT3G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver