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KSH210TF

KSH210TF

KSH210TF

ON Semiconductor

KSH210TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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KSH210TF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 1.4W
Terminal Form GULL WING
Current Rating -5A
Frequency 65MHz
Base Part Number KSH210
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Gain Bandwidth Product 65MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage -1.8V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -8V
hFE Min 45
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.131956 $0.131956
10 $0.124486 $1.24486
100 $0.117440 $11.744
500 $0.110792 $55.396
1000 $0.104521 $104.521
KSH210TF Product Details

KSH210TF Overview


DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.8V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -8V can result in a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 65MHz in the part.This device can take an input voltage of 25V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.

KSH210TF Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz

KSH210TF Applications


There are a lot of ON Semiconductor KSH210TF applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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