KSH210TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSH210TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
1.4W
Terminal Form
GULL WING
Current Rating
-5A
Frequency
65MHz
Base Part Number
KSH210
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Gain Bandwidth Product
65MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
-1.8V
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-8V
hFE Min
45
Height
2.3mm
Length
6.6mm
Width
6.1mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.131956
$0.131956
10
$0.124486
$1.24486
100
$0.117440
$11.744
500
$0.110792
$55.396
1000
$0.104521
$104.521
KSH210TF Product Details
KSH210TF Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.8V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -8V can result in a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 65MHz in the part.This device can take an input voltage of 25V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.
KSH210TF Features
the DC current gain for this device is 45 @ 2A 1V a collector emitter saturation voltage of -1.8V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at -8V the current rating of this device is -5A a transition frequency of 65MHz
KSH210TF Applications
There are a lot of ON Semiconductor KSH210TF applications of single BJT transistors.