BCW29,235 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 2.5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BCW29,235 Features

the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BCW29,235 Applications

There are a lot of Nexperia USA Inc. BCW29,235 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver