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PZT2222A,135

  • PZT2222A,135
  • PZT2222A,135

PZT2222A,135

PZT2222A,135

Nexperia USA Inc.

PZT2222A,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PZT2222A,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.15W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 300MHz
Base Part Number PZT2222A
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.15W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 1 V
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 35ns
Collector-Base Capacitance-Max 8pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.41000 $0.41
500 $0.4059 $202.95
1000 $0.4018 $401.8
1500 $0.3977 $596.55
2000 $0.3936 $787.2
2500 $0.3895 $973.75
PZT2222A,135 Product Details

PZT2222A,135 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.During maximum operation, collector current can be as low as 600mA volts.

PZT2222A,135 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

PZT2222A,135 Applications


There are a lot of Nexperia USA Inc. PZT2222A,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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