MJD200T4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.As it features a collector emitter saturation voltage of 1.8V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.An emitter's base voltage can be kept at 8V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.The part has a transition frequency of 65MHz.An input voltage of 25V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 5A volts.
MJD200T4 Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4 Applications
There are a lot of ON Semiconductor MJD200T4 applications of single BJT transistors.
- Interface
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- Muting
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- Inverter
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- Driver
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