NSVBC847BTT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.During maximum operation, collector current can be as low as 100mA volts.
NSVBC847BTT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
NSVBC847BTT1G Applications
There are a lot of ON Semiconductor NSVBC847BTT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
