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NSVBC847BTT1G

NSVBC847BTT1G

NSVBC847BTT1G

ON Semiconductor

NSVBC847BTT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBC847BTT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.066899 $0.066899
500 $0.049190 $24.595
1000 $0.040991 $40.991
2000 $0.037607 $75.214
5000 $0.035147 $175.735
10000 $0.032695 $326.95
15000 $0.031620 $474.3
50000 $0.031091 $1554.55
NSVBC847BTT1G Product Details

NSVBC847BTT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.During maximum operation, collector current can be as low as 100mA volts.

NSVBC847BTT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

NSVBC847BTT1G Applications


There are a lot of ON Semiconductor NSVBC847BTT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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