PMBTA42,185 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBTA42,185 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
PMBTA42
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
50MHz
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
300V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.110880
$0.11088
10
$0.104604
$1.04604
100
$0.098683
$9.8683
500
$0.093097
$46.5485
1000
$0.087827
$87.827
PMBTA42,185 Product Details
PMBTA42,185 Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).A transition frequency of 50MHz is present in the part.Maximum collector currents can be below 100mA volts.
PMBTA42,185 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 50MHz
PMBTA42,185 Applications
There are a lot of Nexperia USA Inc. PMBTA42,185 applications of single BJT transistors.