MJD32T4G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.When collector current reaches its maximum, it can reach 3A volts.
MJD32T4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32T4G Applications
There are a lot of ON Semiconductor MJD32T4G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
