MJE170G Overview

This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1.7V, giving you a wide variety of design options.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

MJE170G Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 2A
a transition frequency of 50MHz

MJE170G Applications

There are a lot of ON Semiconductor MJE170G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting