MJE18002G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 200mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 920mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.As a result, the part has a transition frequency of 13MHz.During maximum operation, collector current can be as low as 2A volts.
MJE18002G Features
the DC current gain for this device is 14 @ 200mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
a transition frequency of 13MHz
MJE18002G Applications
There are a lot of ON Semiconductor MJE18002G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
