MMBT4401M3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 250MHz.The maximum collector current is 600mA volts.
MMBT4401M3T5G Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401M3T5G Applications
There are a lot of ON Semiconductor MMBT4401M3T5G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
