2N5550RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5550RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRAG Applications
There are a lot of Rochester Electronics, LLC 2N5550RLRAG applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
