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NSV1C200LT1G

NSV1C200LT1G

NSV1C200LT1G

ON Semiconductor

NSV1C200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV1C200LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 490mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 2A
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -950mV
Collector Base Voltage (VCBO) -140V
Continuous Collector Current -2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.21194 $0.63582
6,000 $0.19898 $1.19388
15,000 $0.18603 $2.79045
30,000 $0.18387 $5.5161
NSV1C200LT1G Product Details

NSV1C200LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.The collector emitter saturation voltage is -950mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 200mA, 2A.Continuous collector voltages of -2A should be maintained to achieve high efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 2A volts.

NSV1C200LT1G Features


the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -950mV
the vce saturation(Max) is 250mV @ 200mA, 2A
a transition frequency of 120MHz

NSV1C200LT1G Applications


There are a lot of ON Semiconductor NSV1C200LT1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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