NSV1C200LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.The collector emitter saturation voltage is -950mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 200mA, 2A.Continuous collector voltages of -2A should be maintained to achieve high efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
NSV1C200LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -950mV
the vce saturation(Max) is 250mV @ 200mA, 2A
a transition frequency of 120MHz
NSV1C200LT1G Applications
There are a lot of ON Semiconductor NSV1C200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
