QSL12TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 120mV.When VCE saturation is 350mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of 1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.Parts of this part have transition frequencies of 320MHz.Collector current can be as low as 1A volts at its maximum.
QSL12TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
QSL12TR Applications
There are a lot of ROHM Semiconductor QSL12TR applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
